HOUSTON – (Aug. 20, 2025) – In a groundbreaking development, a team of materials scientists at Rice University has unveiled a novel method for growing ultrathin semiconductors directly onto electronic components. This innovative approach, detailed in a study published in ACS Applied Electronic Materials, promises to streamline the integration of two-dimensional materials into next-generation electronics, neuromorphic computing, and other cutting-edge technologies that demand ultrathin, high-speed semiconductors.
The Rice researchers employed chemical vapor deposition (CVD) to grow tungsten diselenide, a 2D semiconductor, directly on patterned gold electrodes. This method was demonstrated through the construction of a functional, proof-of-concept transistor. Unlike conventional techniques that necessitate transferring fragile 2D films from one surface to another, the Rice team’s approach eliminates the transfer process entirely, marking a significant advancement in semiconductor fabrication.
Revolutionizing Semiconductor Fabrication
“This is the first demonstration of a transfer-free method to grow 2D devices,” stated Sathvik Ajay Iyengar, a doctoral student at Rice and a co-first author of the study alongside Rice doctoral alumnus Lucas Sassi. “This is a solid step toward reducing processing temperatures and making a transfer-free, 2D semiconductor-integration process possible.”
The discovery originated from an unexpected observation during a routine experiment. “We received a sample from a collaborator that had gold markers patterned on it,” Sassi explained. “During CVD growth, the 2D material unexpectedly formed predominantly on the gold surface. This surprising result sparked the idea that by deliberately patterning metal contacts, we might be able to guide the growth of 2D semiconductors directly across them.”
The Challenge of 2D Semiconductor Integration
Semiconductors are the backbone of modern computing, and as the industry races toward smaller, faster, and more efficient components, incorporating high-performance, atomically thin materials like tungsten diselenide has become increasingly important. Traditional fabrication methods involve growing the 2D semiconductor separately, usually at very high temperatures, before transferring it through a series of delicate steps. Although 2D materials hold the potential to outperform silicon in certain metrics, their fragility during the transfer process has posed significant challenges to industrial applications.
“The transfer process can degrade the material and damage its performance,” noted Iyengar, who is part of Pulickel Ajayan’s research group at Rice. The Rice team optimized precursor materials to lower the synthesis temperature of the 2D semiconductor, demonstrating that it grows in a controlled, directional manner.
Insights from Advanced Imaging and Analysis
Using advanced imaging and chemical analysis tools, the team confirmed that their method preserves the integrity of the metal contacts, which are susceptible to damage at high temperatures. “A lot of our work in this project was focused on proving that the materials system is still intact,” Iyengar said. “We are well-equipped here at Rice to study the chemistry that goes on in this process to a very fine degree. Seeing what happens at the interface between these materials was a great motivator for the research.”
“The absence of reliable, transfer-free methods for growing 2D semiconductors has been a major barrier to their integration into practical electronics,” Sassi noted. “This work could unlock new opportunities for using atomically thin materials in next-generation transistors, solar cells, and other electronic technologies.”
Global Collaboration and Future Prospects
The project was inspired by a question raised during a U.S.-India research initiative: Could a semiconductor fabrication process for 2D materials be developed on a limited budget? “This started through our collaboration with partners in India,” said Iyengar, who is a fellow of the Japan Society for the Promotion of Science and an inaugural recipient of the Quad Fellowship. This program, launched by the governments of the U.S., India, Australia, and Japan, supports early-career scientists in exploring the intersection of science, policy, and diplomacy on the global stage.
“It showed how international partnerships can help identify practical constraints and inspire new approaches that work across global research environments,” Iyengar added. Together with a few peers in the Quad Fellowship cohort, Iyengar co-authored an article outlining the potential for this method to revolutionize semiconductor fabrication.
Implications and Future Directions
The implications of this breakthrough are vast, with potential applications extending beyond traditional electronics to include solar cells and other technologies that benefit from the unique properties of 2D materials. The move represents a significant step toward overcoming the hurdles associated with 2D semiconductor integration, notably the challenges of maintaining electrical contact quality and ensuring compatibility with a wide range of materials.
As the technology progresses, the Rice team’s method could pave the way for more efficient, scalable production processes in the semiconductor industry. This development follows a growing trend of interdisciplinary collaboration and innovation in materials science, highlighting the importance of global partnerships in advancing technological frontiers.
In conclusion, Rice University’s pioneering work in transfer-free semiconductor growth marks a transformative moment in the field, with the potential to reshape the landscape of next-generation electronics. As researchers continue to refine and expand upon this method, the future of semiconductor technology looks increasingly promising.
